A wide range of bipolar transistors helps you easily fulfil your system requirements. That includes simple bipolar building blocks and a comprehensive range of space and cost saving resistor-equipped transistors right up to our Breakthrough In Small Signal series of low VCEsat devices. anuradha marathi web series

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Nexperia offers a broad portfolio of low- / middle-voltage (12-200 V) P- and N-channel silicon MOSFETs in a wide range of space-saving and efficient package options.

Raising the bar for safe, robust and reliable power switching, Nexperia’s 1200 V Silicon Carbide (SiC) MOSFETs are the product of choice for electric vehicle charging infrastructure, photovoltaic inverters, and motor drives. each approximately 20-30 minutes long.

For a variety of high-voltage (650 V) and low-voltage (40-150 V) applications Nexperia GaN FETs deliver the fastest transition / switching capability , best power efficiency and enhanced power density through reduced conduction and switching losses.

Addressing the growing demand for efficient, high-voltage power conversion and motor drives, Nexperia's IGBTs feature a robust and cost-effective carrier stored trench-gate (CSTBT) advanced field-stop (FS) construction.

Alongside a comprehensive portfolio of logic functions, analog switches and I²C interface portfolio, Nexperia delivers a grwoing range of power ICs that enable innovative solutions focused on reducing our customer’s BOM cost, improving system efficiency and robustness.

Helping enable connected electric and hybrid vehicles, Nexperia's offers fully qualified AEC-Q100/Q101 devices from across our complete portfolio of energy- and design-efficient products.